NXP Semiconductors

Description

Jan 13, 2004 FEATURES. General. Baud rate up to 20 Kbaud. Very low ElectroMagnetic Emission (EME). High ElectroMagnetic Immunity (EMI). Low slope mode for an even further reduction of EME. Passive behaviour in unpowered Jan 19, 2010 The EEPROM memory is broken up into 8 blocks of 1 kbit (128 bytes) each. Within each block, the memory is physically organized in to 8 pages of 128 bits ( 16 bytes) each. In addition to these 8 kbits, there are two more high-speed, low-side gate driver devices capable of. Two Independent Gate- Drive Channels effectively driving MOSFET and IGBT power. 5-A Peak Source and Sink Drive Current switches. Using a design that inherently minimizes.