Description
Datasheet 1N5820 - 1N5822. 3.0A SCHOTTKY BARRIER RECTIFIERS. Features and Benefits. . Guard Ring Die Construction for Transient Protection. . Low Power Loss 1N5820 , 1N5821, 1N5822 www.vishay.com. Vishay General Semiconductor. Revision: 13-Aug-13. 1. Document Number: 88526. For technical questions within 1N5820 and 1N5822 are Preferred Devices. Axial Lead Rectifiers. This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode The 1N5820 axial leaded Schottky rectifier has been opti- mized for very low forward voltage drop, with moderate leakage. Typical applications are in switching n LOW FORWARD VOLTAGE DROP n AVALANCHE CAPABILITY SPECIFIED. FEATURES AND BENEFITS. Symbol. Parameter. Value. Unit. 1N5820 1N5821
Part Number | 1N5820 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | NXP Semiconductors |
Description | DIODE SCHOTTKY 20V 3A DO201AD |
Series | - |
Packaging | Cut Tape (CT) |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 20V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 475mV @ 3A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 500µA @ 20V |
Capacitance @ Vr, F | 190pF @ 4V, 1MHz |
Mounting Type | Through Hole |
Package / Case | DO-201AD, Axial |
Supplier Device Package | DO-201AD |
Operating Temperature - Junction | -65°C ~ 125°C |
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1N5820
NxpSemiconductors
180
0.23
SUNTOP SEMICONDUCTOR CO., LIMITED
1N5820
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30000
0.6275
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3680
1.025
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1000
1.82
KK Wisdom Limited