(4/5) based on 11 customer reviews
Description
Oct 23, 2012 VCBO. Collector-base voltage (IE = 0). 700. V. VCEO. Collector-emitter voltage ( IB = 0). 400. V. VEBO. Emitter-base voltage (IC = 0, IB = 1.5 A, Aug 1, 1996 SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. VDS drain-source voltage. -. 12. V. ID drain current. -. 30. mA. IG1 gate 1 current. Characteristic. Symbol. Max. Unit. Thermal Resistance, Junction-to-Ambient. R JA. 200. C/W. Thermal Resistance, Junction-to-Case. R JC. 83.3. C/W. 2011 2 1 . THERMAL CHARACTERISTICS. Characteristic. Symbol. Max. Unit. Thermal Resistance, Junction-to-Ambient. R JA. 200. C/W. Thermal Resistance
| Part Number | 915055 |
| Brand | NXP Semiconductors |
| Image |  |
915055
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99899
1.18
Shinever Technology Limited
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1000
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59
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1000
3.76
Yingxinyuan INT'L (Group) Limited
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Hong Kong In Fortune Electronics Co., Limited
