(4/5) based on 16 customer reviews
Description
The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and The AOD7N65 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in AOD7N65 Marking Description. DPAK (T 0-252) PACKAGE MARKING DESCRIPTION. NOTE: LOGO - AOS Logo. D7N65 - Part number code. F - Fab code. TSM70N1R4CP. IPN65R1K5CE IPD65R1K5CE. STD6N65M2. TK5P65W. SSF5NS65UD. LSG03N65. AOD7N65 . CS7N65 A4R. IPN60R3K4CE IPD60R3K4CE. May 19, 2016 AOD7N65 . 100k. R1. 10 F. C8. GND. 100pF. C12. GND. GND. 1. 3. 2. D2. PDS1040L-13. 2.0. R8. 0. R10. L2. N1. FAULT. 1. IN1. 2. IN1. 3. IN2.
| Part Number | AOD7N65 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | NXP Semiconductors |
| Description | MOSFET N-CH 650V 7A TO252 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.56 Ohm @ 3.5A, 10V |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252, (D-Pak) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
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