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Description
The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for This AOS product reliability report summarizes the qualification result for AON7403 . Accelerated environmental tests are performed on a specific sample size, ALPHA & OMEGA. SEMICONDUCTOR. Document No. ID-00874. Version. B. Title. AON7403 Marking Description. DFN3X3 PACKAGE MARKING AON7403 . GND. GND. GND. TO LOAD CIRCUIT. +12.8V NOMINAL INPUT. -30V MAX NEGATIVE INPUT. DETERMINED BY MOSFET. VDS MAX. BATTERY Apr 16, 2015 NEW PRODUCT. ANNOUNCEMENT. TSC. Infineon. Fairchild. Alpha & Omega. TSM150P03PQ33 BSZ180P03NS3. FDMC6675BZ. AON7403 .
| Part Number | AON7403 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | NXP Semiconductors |
| Description | MOSFET P-CH 30V 11A 8DFN |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 29A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 15V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 25W (Tc) |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN (3x3) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Image |  |
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