NXP Semiconductors

Description

Aug 3, 2015 BCR1AM -12A. 600V-1A-Triac. Low Power Use. Features. IT (RMS) : 1 A. VDRM : 600 V. IFGTI , IRGTI, IRGT III : 7 mA. Non-Insulated Type. Sep 17, 2010 BCR1AM -12. Triac. Low Power Use. Features. IT (RMS) : 1 A. VDRM : 600 V. IFGTI , IRGTI, IRGT III : 5 mA (3 mA)Note5. IFGT III : 10 mA. R07DS0178EJ0200 Rev.2.00. Page 1 of 7. Aug 25,2015. Preliminary Datasheet. BCR1AM -8P. 400V-1A-Triac. Low Power Use. Features. IT (RMS) : 1 A. *1: The IV mode (G+, T2 ) is not generally guaranteed except those of BCR08AS and BCR1AM . 1. Examples of gate trigger circuit. SBS diac. Lead relay. Renesas Electronics is constantly improving the performance of its lineup of low- voltage power. MOSFETs to enable more efficient power supplies that use less