NXP Semiconductors

Description

Datasheet Dec 8, 1997 DATA SHEET. Product specification. Supersedes data of 1997 Sep 03. 1997 Dec 08. DISCRETE SEMICONDUCTORS. BF1109 ; BF1109R BF1109 , have been developed for a typical Self Biasing Current of 12mA. For application of these types the nominal Gate2-Source voltage is to be set to 4V. BF1100. SOT143. BF1109 . S-band/. L-band. RF transistor. SiGeC transistor. SOT343F. BFU725F. RF bipolar transistor. Wideband transistor. SOT343. BFG425W. RF Manual product & design manual for RF small signal discretes Page: 1. 4th edition. Philips. RF Manual product & design manual for. RF small signal 2007 9 1 BF1109 . S-band/. L-band. RF . SiGeC. . SOT343F. BFU725F. RF % . . . SOT343. BFG425W. SOT343. BFG410W.