Part Number | BFU710F,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | NXP Semiconductors |
Description | TRANSISTOR NPN SOT343F-4 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 2.8V |
Frequency - Transition | 43GHz |
Noise Figure (dB Typ @ f) | 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz |
Gain | - |
Power - Max | 136mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 2V |
Current - Collector (Ic) (Max) | 10mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-343F |
Supplier Device Package | 4-DFP |
Image |
BFU710F,115
NxpSemiconductors
8000
1.05
MY Group (Asia) Limited
BFU710F,115
NXP Semiconductor
6000
1.9525
Shenzhen Xinyue Micro Technology Co., LTD
BFU710F115
WEEN/NXP
28808
2.855
HK YST ELECTRONIC LIMITED
BFU710F,115
NXP/Freescal
30000
3.7575
IC Direct Technology Limited
BFU710F,115
NXP
7493
4.66
Nosin (HK) Electronics Co.