NXP Semiconductors

Description

Nov 2, 2001 DATA SHEET. Product specification. Supersedes data of 2001 Oct 25. 2001 Nov 02. DISCRETE SEMICONDUCTORS. BGD885 . 860 MHz, 17 dB gain power doubler amplifier dbook, halfpage. M3D248 Dec 31, 2011 Full. Withdrawal. 30-jun-2012. 31-dec-2012. HIGH PERFORMANCE RF Multiple Source. Standard End of Life. 934005490112. BGD885 . CATV amplifier module. RFS. N. 0. SOT115. SOT115. No. Full. Withdrawal. 30-jun-2012. 31-dec-2012. HIGH PERFORMANCE RF Multiple Source. Standard End of Life. These devices were designed for use where the output voltage is a product of an input voltage (signal) and a switching function (carrier). Typical applications include suppressed carrier and amplitude modulation, synchronous detection, FM detection, phase detection, and chopper applications. See ON Semiconductor BGD885 . 16.5 - 17.5 0.2 - 1.6 0.5 20/20. -. -. -. 129. 59. 8. 450. BGD802. 18 - 19. 0.2 - 2. 0.5 20/20 -54. -59. -56. 129. 44. 9. 410. BGD812. 18.2 - 18.8 0.4 - 1.4 0.5 23/23 -58. -62. -60. 132. 44. 7.5 410. BGD902. 18.2 - 18.8 0.4 - 1.4 0.3 21/ 25 -58. -62. -58. 129. 44. 8. 435. BGD902L. 18 - 19. 0.4 - 1.4 0.3 21/21 -56. -60. BGD885 . 16.5 - 17.5. 0.2 - 1.6. 0.5. 20/20. -. -. -. 129. 59. 8. 450. BGD802. 18 - 19. 0.2 - 2. 0.5. 20/20. -54. -59. -56. 129. 44. 9. 410. BGD812. 18.2 - 18.8. 0.4 - 1.4. 0.5. 23/23. -58. -62. -60. 132. 44. 7.5. 410. BGD804. 19.5 - 20.5. 0.2 - 2. 0.5. 20/20. -53. -61. -54. 129. 44. 7.5. 410. BGD814. 19.7 - 20.3. 0.4 - 1.4. 0.5.