NXP Semiconductors

Description

CHARACTERISTICS TC = 25 C. SYMBOL. NONETEST CONDITIONS. MINIMUM TYPICAL MAXIMUM UNITS. V(BR)DSS. VGS = 0 V. IDS = 10 mA. 65. ---. ---. V. IDSS. VDS = 28 V. VGS = 0 V. ---. ---. 2.0. mA. IGSS. VDS = 0 V. VGS = 20 V. ---. ---. 1.0. A. VGS. VDS = 10 V. ID = 10 mA. 2.0. ---. 4.5. V. VGS1-VGS2. VDS = 10 V. Dec 5, 1997 SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. VDS drain-source voltage. -. 25. V. VGSO gate-source voltage open drain. -. -25. V. Ptot total power dissipation. Tamb 40 C. -. 250. mW. IDSS drain current. VGS = 0; VDS = 10 V. BFR30. 4. 10. mA. BFR31. 1. 5. mA. yfs common-source Main features. Single-phase encapsulated technology. Single pressure, self- blast interrupter that can be arranged either vertically or horizontally. Circuit breaker single pole or three pole operated by a spring-type drive. Combined disconnector and earthing switch. Current transformer cast resin insulated. Jul 30, 2012 This application note describes the materials for reflow soldering: the Printed- Circuit. Board (PCB), semiconductor packages and solder paste. One of the key features of the. PCB is the footprint design. The footprint design describes the recommended solder land on the PCB to make a reliable solder joint Apr 23, 2013 BLA6G1011L-200RG Available Available BLA6G1011LS-200RG Available Available BLA6H0912-500 Available Available BLA6H1011-600 Available Available BLD6G22L-50 Available BLD6G22LS-50 Available BLF1043 28V_50mA BLF1046 28V_300mA BLF145 14V_250mA.