Part Number | BU808DFI |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | NXP Semiconductors |
Description | TRANS NPN DARL 700V ISOWATT218 |
Series | - |
Packaging | Tube |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 8A |
Voltage - Collector Emitter Breakdown (Max) | 700V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500mA, 5A |
Current - Collector Cutoff (Max) | 400µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5A, 5V |
Power - Max | 52W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | ISOWATT-218-3 |
Supplier Device Package | ISOWATT-218 |
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BU808DFI
NxpSemiconductors
2638
1.41
HK HEQING ELECTRONICS LIMITED
BU808DFI
NXP Semiconductor
3653
2.725
Gallop Great Holdings (Hong Kong) Limited
BU808DFI
WEEN/NXP
9825
4.04
CIS Ltd (CHECK IC SOLUTION LIMITED)
BU808DFI
NXP/Freescal
5119
5.355
Ande Electronics Co., Limited
BU808DFI
NXP
1937
6.67
NEW IDEAS INDUSTRIAL CO., LIMITED