Part Number | BUK653R2-55C,127 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 55V 120A TO220AB |
Series | TrenchMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 258nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 15300pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 306W (Tc) |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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BUK653R2-55C127
NxpSemiconductors
3301
1.43
Honestwin Technology Co., Limited
BUK653R2-55C,127
NXP Semiconductor
9246
2.7975
Cinty Int'l (HK) Industry Co., Limited
BUK653R2-55C,127
WEEN/NXP
9909
4.165
Hlinsemi Electronics (HongKong) Co., Limited
BUK653R2-55C,127
NXP/Freescal
3786
5.5325
SHERLOCK ELECTRONICS LIMITED
BUK653R2-55C,127
NXP
9187
6.9
MY Group (Asia) Limited