Part Number | BUK653R3-30C,127 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 30V 100A TO-220AB |
Series | TrenchMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6960pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 204W (Tc) |
Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
BUK653R3-30C,127
NxpSemiconductors
1000
0.35
MY Group (Asia) Limited
BUK653R3-30C,127
NXP Semiconductor
50000
1.4125
VIPOWER TECHNOLOGY LIMITED
BUK653R3-30C,127
WEEN/NXP
20000
2.475
Ande Electronics Co., Limited
BUK653R2-55C,127
NXP/Freescal
1000
3.5375
MY Group (Asia) Limited
BUK653R2-55C
NXP
87500
4.6
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED