Part Number | BUK961R4-30E,118 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 30V 120A D2PAK |
Series | TrenchMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 113nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 16150pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 357W (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 mOhm @ 25A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
BUK961R4-30E,118
NxpSemiconductors
7536
1.65
MY Group (Asia) Limited
BUK961R4-30E,118
NXP Semiconductor
4429
2.3425
Bonase Electronics (HK) Co., Limited
BUK961R4-30E,118
WEEN/NXP
689
3.035
Far East Electronics Technology Limited
BUK961R4-30E,118
NXP/Freescal
3445
3.7275
Ande Electronics Co., Limited
BUK9610 55A
NXP
5104
4.42
Pacific Corporation