Part Number | BUK969R3-100E,118 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 100V 100A D2PAK |
Series | Automotive, AEC-Q101, TrenchMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 94.3nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 11650pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 263W (Tc) |
Rds On (Max) @ Id, Vgs | 8.9 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
BUK969R3-100E,118
NxpSemiconductors
5809
0.93
MY Group (Asia) Limited
BUK969R3-100E,118
NXP Semiconductor
6052
1.94
VIPOWER TECHNOLOGY LIMITED
BUK969R3-100E,118
WEEN/NXP
6495
2.95
Ande Electronics Co., Limited
BUK969R0-60E,118
NXP/Freescal
3507
3.96
MY Group (Asia) Limited
BUK969R3-100E
NXP
1978
4.97
Nosin (HK) Electronics Co.