Part Number | BUK9E4R4-80E,127 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 80V 120A I2PAK |
Series | TrenchMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 123nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 17130pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 349W (Tc) |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
BUK9E4R4-80E127
NxpSemiconductors
6657
0.28
Dedicate Electronics (HK) Limited
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5000
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