Part Number | BUK9Y22-30B,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 30V 37.7A LFPAK |
Series | Automotive, AEC-Q101, TrenchMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 37.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 940pF @ 25V |
Vgs (Max) | ±15V |
FET Feature | - |
Power Dissipation (Max) | 59.4W (Tc) |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | LFPAK56, Power-SO8 |
Package / Case | SC-100, SOT-669 |
Image |
BUK9Y22-30B,115
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