Part Number | BUZ80A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 800V 3.6A TO-220AB |
Series | SIPMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
BUZ80A
NxpSemiconductors
310
0.6
FLOWER GROUP(HK)CO.,LTD
BUZ80A
NXP Semiconductor
6458
1.3775
Belt (HK) Electronics Co
BUZ80A
WEEN/NXP
95030
2.155
ICBROS TECHNOLOGY LIMITED
BUZ80A (IRF840)
NXP/Freescal
48000
2.9325
Yingxinyuan INT'L (Group) Limited
BUZ80A
NXP
22033
3.71
Yingxinyuan INT'L (Group) Limited