NXP Semiconductors

Description

DB101S-G Thru. DB107S -G. Dimensions in inches and (millimeter). QW-BBR50. Forward Current: 1.0A. RoHS Device. DBS. Comchip Technology CO., LTD. DB107S -HF. HF. Dimensions in inches and (millimeter). QW-JBR08. Forward Current: 1.0A. RoHS Device. DBS. Comchip Technology CO., LTD. 0.134(3.40). DB107 . 1 Amp Single Phase. Glass Passivated. Bridge Rectifier. 50 to 1000 Volts . Features. 4-PIN DIP Package. Glass Passivated Diode Construction. DB107 -G. Parameter. Symbol. Unit. QW-BBR69. Maximum Recurrent Peak R. Voltage everse. Maximum RMS Voltage. Maximum DC Blocking Voltage. Revision: 19-Aug-13. 1. Document Number: 88573. For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,