Part Number | FDB5645 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 60V 80A TO-263AB |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 80A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4468pF @ 30V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 40A, 10V |
Operating Temperature | -65°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FDB5645
NxpSemiconductors
4920
0.29
Ysx Tech Co., Limited
FDB5645
NXP Semiconductor
6708
1.6725
HK HEQING ELECTRONICS LIMITED
FDB5645
WEEN/NXP
659
3.055
ShenZhen RuiXi International Trading Co., Ltd.
FDB5645**
NXP/Freescal
2915
4.4375
N&S Electronic Co., Limited
FDB5645
NXP
8551
5.82
Yingxinyuan INT'L (Group) Limited