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Description
Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDD5614P . FDD5614P . Jan 13, 2017 FDD5614P . TO252-3 (NiLFAlBW). FSSZ. FSSZ. 0.29183. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. R2. 510. D1. B340LA-13. 2. 1. R26. 0. C4. 0.1uF. C3. 1uF. R8. 100. R17. 1.0k. C9 . 0.1uF. Q2. FDD5614P . 1. 2. 3. R9. 2.0K. DZ2. SMAJ7.5A. 2. 1. J1. PWR JACK. FDD5614P . T1. C10. 82 F. 63 V. C6. 220 F. 35 V. R2. 200 . R5. 1 k . R6. 0.01 . R4. 9.53 k . R3. 100 k . R1. 49.9 k . RC. VDD. SS. ISNS. COMP DRV. FB.
| Part Number | FDD5614P |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | NXP Semiconductors |
| Description | MOSFET P-CH 60V 15A DPAK |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 759pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 42W (Tc) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 4.5A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
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