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Description
May 2, 2001 FQP27P06 . 60V P-Channel MOSFET. General Description. These P-Channel enhancement mode power field effect transistors are produced Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FQP27P06 . FQP27P06 . Jul 12, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP27P06 . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. Nov 2, 2015 FQP27P06 . R1. 1K. R2. 1K. Q3. 2N2222A. Q4. FQP27P06 . R3. 1K. R4. 1K. Q5. 2N2222A. Q6. FQP27P06 . R5. 1K. R6. 1K. Q7. 2N2222A. Q8. Page 1. H. IA. L. IA. L. IB. H. IB. L. O. B. H. SB. H. SA. L. O. A. H. O. A. H. B. A. H. B. B. H. O. B. PG. O. O. D. PG. N. D. A. G. N. D. SIB. IO. U. T. SO. B. SIA. IIN.
| Part Number | FQP27P06 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | NXP Semiconductors |
| Description | MOSFET P-CH 60V 27A TO-220 |
| Series | QFET |
| Packaging | Tube |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 13.5A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
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