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Description
Jul 7, 2000 Parameter. Max. Units. VCES. Collector-to-Emitter Breakdown Voltage. 1200. V. IC @ TC = 25 C. Continuous Collector Current. 45. IC @ TC The MC14093B Schmitt trigger is constructed with MOS. P channel and N channel enhancement mode devices in a single monolithic structure. These devices No Volume. HEF40106BP . N-B. BURN-IN VERSION. 933636660652. 12/31/99. 06/30/00 DIL / SO WITH NO BURN-IN OPTION. 2, 6. No Volume. HEF4011UBP. Dec 31, 2014 30-Jun-2015. 31-Dec-2015 HEF4001BT,652. 933372590652. HEF4001BT. HEF. Support is based on available inventory. HEF40106BP ,65. 2.
| Part Number | HEF40106BP |
| Brand | NXP Semiconductors |
| Image |  |
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