Part Number | IPB180P04P4L02ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET P-CH 40V 180A TO263-7 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 410µA |
Gate Charge (Qg) (Max) @ Vgs | 286nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 18700pF @ 25V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-7-3 |
Package / Case | TO-263-7, D²ÂPak (6 Leads + Tab), TO-263CB |
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