NXP Semiconductors

Description

Apr 14, 2015 The IR2010 is a high power, high voltage, high speed power. MOSFET and IGBT driver with independent high and low side referenced output www.irf.com. Power Dissipation in Gate Driver (Contd). Figure 32: IR2010S Tj vs Frequency. RG ATE = 10 O hm , Vcc = 15V w ith IRFPE50. 0.00. 25.00. 50.00. Gate voltage must be 10 V to 15 V higher than the source voltage. Being a high- side switch, such gate voltage would have to be higher than the rail voltage, Introduction. This application note describes how to implement a brushless DC motor control in sensor mode using the ATmega32M1 AVR microcontroller. Due to its controllability, ease of use and high power ratings, the IGBT (Insulated. Gate Bipolar Transistor) has become the component of choice for many power.