Part Number | IRF630 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 200V 9A TO-220 |
Series | MESH OVERLAY,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 75W (Tc) |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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IRF630
NxpSemiconductors
6837
0.81
Fairstock HK Limited
IRF630
NXP Semiconductor
6062
1.7475
Xinye International Technology Limited
IRF630
WEEN/NXP
7083
2.685
SUNTOP SEMICONDUCTOR CO., LIMITED
IRF630
NXP/Freescal
9788
3.6225
Belt (HK) Electronics Co
IRF630(ST)
NXP
8507
4.56
CIS Ltd (CHECK IC SOLUTION LIMITED)