Part Number | IRF6635TR1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 30V 32A DIRECTFET |
Series | HEXFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.35V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 71nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 5970pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 32A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MX |
Package / Case | DirectFET,Isometric MX |
Image |
IRF6635TR1
NxpSemiconductors
6019
0.74
Dedicate Electronics (HK) Limited
IRF6635TR1
NXP Semiconductor
1968
1.9625
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF6635TR1
WEEN/NXP
20000
3.185
Finestock Electronics HK Limited
IRF6635TR1
NXP/Freescal
1000
4.4075
MY Group (Asia) Limited
IRF6635TR1
NXP
56800
5.63
Ruised Technology (HONGKONG) LIMITED