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Description
Datasheet Mar 6, 2006 IRFB3207PbF . IRFS3207PbF. IRFSL3207PbF. HEXFET. . Power MOSFET. Applications l High Efficiency Synchronous Rectification in SMPS. IRFB3207PbF . 75. 4.1. TO-220. IRFB3307PbF. 75. 5.8. TO-220. IRF7854PbF. 80. 13.4. SO-8. IRFB4110PbF. 100. 4.5. TO-220. IRFB4310PbF. 100. 7.0. TO-220. 9.4m . SO-8. IRFB3207PbF . 75V. 4.1m . TO-220. IRFB3307PbF. 75V. 5.8m . TO-220. IRF7854PbF. 80V. 13.4m . SO-8. IRFB4110PbF. 100V. 4.5m . TO-220.
| Part Number | IRFB3207PBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | NXP Semiconductors |
| Description | MOSFET N-CH 75V 180A TO-220AB |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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