NXP Semiconductors

Description

IRFP260N . HEXFET Power MOSFET. 10/08/04. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 50. ID @ TC = 100 C. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Aug 29, 2001 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 56. ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V. Jan 25, 2001 Advanced HEXFET Power MOSFETs from International. Rectifier utilize advanced processing techniques to achieve extremely low Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional