Description
Jul 14, 2015 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. KSH122TF . TO252-3 (NiLFAlBW). FSSZ. FSSZ. Jul 14, 2015 KSH122TF . TO252-3. (NiLFAlBW). Jul 14, 2015. 1.0. FSSZ. 0.29183 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy.
Part Number | KSH122TF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | NXP Semiconductors |
Description | TRANS NPN DARL 100V 8A DPAK |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 8A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A |
Current - Collector Cutoff (Max) | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V |
Power - Max | 1.75W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | D-Pak |
Image |
KSH122TF
NxpSemiconductors
20000
1.83
HK HEQING ELECTRONICS LIMITED
KSH122TF
NXP Semiconductor
8000
3.02
Good Time Electronic Group Limited
KSH122TF
WEEN/NXP
81453
4.21
CIS Ltd (CHECK IC SOLUTION LIMITED)
KSH122TF
NXP/Freescal
8000
5.4
MY Group (Asia) Limited
KSH122TF
NXP
3686
6.59
Belt (HK) Electronics Co