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Description
Datasheet VCE = 2 V. ORDERING INFORMATION. Device. Package Type. Package. Shipping . MJD44H11G . DPAK. (Pb-Free). 369C. 75 Units / Rail. NJVMJD44H11G. Sep 16, 2010 MJD44H11G . MURD620CTH. MJD253T4G. MJD44H11T4G. MURD620CTT4G. MJD2955G. MJD44H11T5G. MURHD560T4G. MJD2955T4G. Jun 20, 2014 MJE15033G. MJB44H11T4G. MJD44H11RLG. MJE172G. MJE15032G. MJD44H11G . BD140G. BD135TG. MJD44H11T5G. BD788G. BD139G. Jun 2, 2010 MJD44H11G . MJD44H11RL. MJD44H11RLG. MJD44H11T4. MJD44H11T4G. MJD44H11T5G. MJD45H11. MJD45H11-1G. MJD45H11G. Jan 24, 2014 MJD44H11G . MJF44H11G. MJB44H11G. MJD44H11RLG. NJD2873T4G. MJD44H11T4G. NJW0281G. Affected Device List for Bipolar Power
| Part Number | MJD44H11G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | NXP Semiconductors |
| Description | TRANS NPN 80V 8A DPAK |
| Series | - |
| Packaging | Tube |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Power - Max | 1.75W |
| Frequency - Transition | 85MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK-3 |
| Image |  |
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