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Description
MRF374A . 1. RF Device Data. Freescale Semiconductor. RF Power Field--Effect Transistor. N--Channel Enhancement--Mode Lateral MOSFET. Designed for MRF374 . MOTOROLA RF DEVICE DATA. The RF MOSFET Line. RF Power Field -Effect Transistor. N Channel Enhancement Mode Lateral MOSFET. Designed CHARACTERISTICS TC = 25 C. SYMBOL. NONETEST CONDITIONS. MINIMUM TYPICAL MAXIMUM UNITS. VDSS. IDS = 1.0 A. 65. V. IDSS. VDS = 28 V. 1.0. 360C/1. MRF374A . U. 470-860. 130 PEP. 32. 17.3/860. 41. 0.58. -31. 375F/2. MRF372. M. 470-860. 180 PEP. 32. 17/860. 36. 0.5. -35. 375G/2. MRF377(46b). M. MRF374 Fixture G. Figure 1. ZVRs Quad Channel Quad Split Display. Order this document by AN1696/D. MOTOROLA. SEMICONDUCTOR APPLICATION
| Part Number | MRF374A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - RF |
| Brand | NXP Semiconductors |
| Description | FET RF 70V 863MHZ NI-650 |
| Series | - |
| Packaging | Tube |
| Transistor Type | LDMOS |
| Frequency | 857MHz ~ 863MHz |
| Gain | 17.3dB |
| Voltage - Test | 32V |
| Current Rating | - |
| Noise Figure | - |
| Current - Test | 400mA |
| Power - Output | 130W |
| Voltage - Rated | 70V |
| Package / Case | NI-650 |
| Supplier Device Package | NI-650 |
| Image |  |
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