Part Number | MTB30P06VT4G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET P-CH 60V 30A D2PAK |
Series | - |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2190pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta), 125W (Tc) |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
MTB30P06VT4G
NxpSemiconductors
1988
1.56
Belt (HK) Electronics Co
MTB30P06VT4G
NXP Semiconductor
5758
2.36
CIS Ltd (CHECK IC SOLUTION LIMITED)
MTB30P06VT4G
WEEN/NXP
3046
3.16
Yingxinyuan INT'L (Group) Limited
MTB30P06VT4G
NXP/Freescal
7046
3.96
Finestock Electronics HK Limited
MTB30P06VT4G
NXP
1879
4.76
Far East Electronics Technology Limited