(4/5) based on 15 customer reviews
Description
MW6S004NT1 . 1. RF Device Data. Freescale Semiconductor. RF Power Field Effect Transistor. N-Channel Enhancement-Mode Lateral MOSFET. Designed for Gain. (Typ)/Freq. dB/MHz. Eff. (Typ). %. JC. C/W. Packaging. MW6S004NT1 . U. 1 2000. 4 PEP. 2--Tone. 28. 18/1960. 33. 8.8. PLD--1.5. A2V07H400--04N(2b). Page 1. Application and design manual for High Performance RF products. May 2011. R. F. M a n u a l 1. 5th e d itio n. RF Manual 15th edition. Page 2. 4. 0. L037AHXD. MW6S004NT1 . 500 Cycles. 1. 45. 0. 0. THB. Techcode. Device. Read Point. Samples. Qty. Rej. % Rej. L035HXXD. MRF8S9170NR3. 504 Hours. Reliability Audit Program. Report From: 01-Jan-2013 To: 31-Dec-2013. MW6S004NT1 . Tech code. Stress. Read Point. Samples Qty. Rej. L037AHXD. HTRB.
| Part Number | MW6S004NT1 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - RF |
| Brand | NXP Semiconductors |
| Description | FET RF 68V 1.96GHZ PLD-1.5 |
| Series | - |
| Packaging | Cut Tape (CT) |
| Transistor Type | LDMOS |
| Frequency | 1.96GHz |
| Gain | 18dB |
| Voltage - Test | 28V |
| Current Rating | - |
| Noise Figure | - |
| Current - Test | 50mA |
| Power - Output | 4W |
| Voltage - Rated | 68V |
| Package / Case | PLD-1.5 |
| Supplier Device Package | PLD-1.5 |
| Image |  |
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