Description
MOSFET N/P-CH 60V/50V SOT666 Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25~C: 330mA, 170mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250米A Gate Charge (Qg) @ Vgs: 0.35nC @ 5V Input Capacitance (Ciss) @ Vds: 36pF @ 25V Power - Max: 500mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666
Part Number | NX1029X,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | NXP Semiconductors |
Description | MOSFET N/P-CH 60V/50V SOT666 |
Series | Automotive, AEC-Q101, TrenchMOS |
Packaging | N and P-Channel |
FET Type | Cut Tape (CT) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V, 50V |
Current - Continuous Drain (Id) @ 25°C | 330mA, 170mA |
Rds On (Max) @ Id, Vgs | 7.5 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 25V |
Power - Max | 500mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-666 |
Image |
NX1029X,115
NxpSemiconductors
25860
0.25
YU TUO (HONGKONG) TRADING CO., LIMITED
NX1029X,115
NXP Semiconductor
180
1.6675
SUNTOP SEMICONDUCTOR CO., LIMITED
NX1029X,115
WEEN/NXP
5800
3.085
ZHONGGANG TECHNOLOGY (HK) INDUSTRY LIMITED
NX1029X,115
NXP/Freescal
6800
4.5025
EASYIEE TECHNOLOGY LIMITED
NX1029X,115
NXP
30000
5.92
Far East Electronics Technology Limited