Part Number | PDTA114EMB,315 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS PNP 250MW 3DFN |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | 180MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Supplier Device Package | 3-DFN1006B (0.6x1) |
Image |
PDTA114EMB,315
NxpSemiconductors
8000
1.25
MY Group (Asia) Limited
PDTA114EMB,315
NXP Semiconductor
50000
1.9775
Redstar Electronic Limited
PDTA114EMB,315
WEEN/NXP
50000
2.705
VIPOWER TECHNOLOGY LIMITED
PDTA114EMB,315
NXP/Freescal
20000
3.4325
Ande Electronics Co., Limited
PDTA113ZU
NXP
2011
4.16
Pacific Corporation