Part Number | PDTA123EM,315 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS PNP 250MW SOT883 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | DFN1006-3 |
Image |
PDTA123EM,315
NxpSemiconductors
20000
0.45
Ariel Electronic Technology Co., Limited
PDTA123EM,315
NXP Semiconductor
6000
1.875
Tianzhidao Co., Limited
PDTA123EM,315
WEEN/NXP
8000
3.3
MY Group (Asia) Limited
PDTA123EM,315
NXP/Freescal
300000
4.725
HK CSY-ELECTRONICS CO., LIMITED
PDTA123EM,315
NXP
9690
6.15
Viassion Technology Co., Limited