Part Number | PDTA123JT,215 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS PNP 250MW TO236AB |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB (SOT23) |
Image |
PDTA123JT,215
NxpSemiconductors
2000000
0.4
IC Chip Co., Ltd.
PDTA123JT,215
NXP Semiconductor
60000
1.2725
Pivot Technology Co., Ltd.
PDTA123JT,215
WEEN/NXP
9317
2.145
Viassion Technology Co., Limited
PDTA123JT,215
NXP/Freescal
75000
3.0175
Redstar Electronic Limited
PDTA123JT,215
NXP
53000
3.89
CIS Ltd (CHECK IC SOLUTION LIMITED)