Part Number | PDTB123ET,215 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS PNP 250MW TO236AB |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB (SOT23) |
Image |
PDTB123ET@215
NxpSemiconductors
20000
1.11
HK ALL-WIN TECHNOLOGY LIMITED
PDTB123ET@215
NXP Semiconductor
4000
1.8475
CIS Ltd (CHECK IC SOLUTION LIMITED)
PDTB123ET,215
WEEN/NXP
15000
2.585
MY Group (Asia) Limited
PDTB123ET,215
NXP/Freescal
27000
3.3225
Yingxinyuan INT'L (Group) Limited
PDTB123ET,215
NXP
60000
4.06
Shenzhenshi Zhongyiyingtong Technology Co.,Ltd