Part Number | PDTC114EM,315 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS NPN 250MW SOT883 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | DFN1006-3 |
Image |
PDTC114EM315
NxpSemiconductors
4831
1.49
HK HEQING ELECTRONICS LIMITED
PDTC114EM,315
NXP Semiconductor
2489
2.505
Skytronic (China) Ltd
PDTC114EM315
WEEN/NXP
6975
3.52
WEIYU INTERNATIONAL TRADE LIMITED
PDTC114EM;315
NXP/Freescal
2997
4.535
Shenzhen Xinyue Micro Technology Co., LTD
PDTC114EM315
NXP
724
5.55
NEW IDEAS INDUSTRIAL CO., LIMITED