Part Number | PDTC114EMB,315 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS NPN 250MW 3DFN |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | 230MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Supplier Device Package | 3-DFN1006B (0.6x1) |
Image |
PDTC114EMB,315
NxpSemiconductors
20000
1.58
Ariel Electronic Technology Co., Limited
PDTC114EMB315
NXP Semiconductor
500
2.6425
HK HEQING ELECTRONICS LIMITED
PDTC114EMB,315
WEEN/NXP
6000
3.705
Tianzhidao Co., Limited
PDTC114EMB,315
NXP/Freescal
6594
4.7675
Viassion Technology Co., Limited
PDTC114EMB,315
NXP
8000
5.83
MY Group (Asia) Limited