Part Number | PDTC114TMB,315 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS NPN 250MW 3DFN |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | 230MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Supplier Device Package | 3-DFN1006B (0.6x1) |
Image |
PDTC114TMB,315
NxpSemiconductors
20000
1.18
Ariel Electronic Technology Co., Limited
PDTC114TMB315
NXP Semiconductor
500
2.12
HK HEQING ELECTRONICS LIMITED
PDTC114TMB,315
WEEN/NXP
6000
3.06
Tianzhidao Co., Limited
PDTC114TMB,315
NXP/Freescal
8000
4
MY Group (Asia) Limited
PDTC114TMB315
NXP
18230
4.94
Shenzhen Zeal Electronics Co.,Ltd