Part Number | PDTC123ET,215 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS NPN 250MW TO236AB |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB (SOT23) |
Image |
Hot Offer
PDTC123ET,215
NXP
1000
4.34
Gallop Great Holdings (Hong Kong) Limited
PDTC123ET215
NxpSemiconductors
1270
0.9
HK HEQING ELECTRONICS LIMITED
PDTC123ET,215
NXP Semiconductor
25000
1.76
KST Components Limited
PDTC123ET215
WEEN/NXP
3770
2.62
CIS Ltd (CHECK IC SOLUTION LIMITED)
PDTC123ET,215
NXP/Freescal
1291429
3.48
TERNARY UNION CO., LIMITED