Part Number | PDTC123EU,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS NPN 200MW SOT323 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SOT-323-3 |
Image |
PDTC123EU,115
NxpSemiconductors
11847
0.67
QIDA (HK) ELECTRONICS TECH CO., LIMITED
PDTC123EU,115
NXP Semiconductor
9829
1.3825
Viassion Technology Co., Limited
PDTC123EU,115
WEEN/NXP
3000
2.095
IC360 ELECTRONICS LIMITED
PDTC123EU,115
NXP/Freescal
50000
2.8075
VIPOWER TECHNOLOGY LIMITED
PDTC123EU,115
NXP
2000000
3.52
TERNARY UNION CO., LIMITED