Part Number | PDTC123JT,215 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS NPN 250MW TO236AB |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB (SOT23) |
Image |
PDTC123JT,215
NxpSemiconductors
82182
0.27
IC Chip Co., Ltd.
PDTC123JT215
NXP Semiconductor
3050
0.925
FLOWER GROUP(HK)CO.,LTD
PDTC123JT215
WEEN/NXP
113866
1.58
F-power Electronics Co
PDTC123JT,215
NXP/Freescal
600
2.235
Redstar Electronic Limited
PDTC123JT,215
NXP
25000
2.89
KST Components Limited