Part Number | PDTC123JU,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS NPN 200MW SOT323 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SOT-323-3 |
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PDTC123JU115
NxpSemiconductors
1210
1.82
IC Chip Co., Ltd.
PDTC123JU115
NXP Semiconductor
3142
2.755
HK HEQING ELECTRONICS LIMITED
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WEEN/NXP
5942
3.69
MY Group (Asia) Limited
PDTC123JU,115
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3309
4.625
Redstar Electronic Limited
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8140
5.56
Antony Electronic Ltd.