NXP Semiconductors

Description

Aug 19, 2011 NPN Silicon Digital Transistor. Switching in circuit, inverter, interface circuit, drive circuit. Built in bias resistor (R1 = 10 k , R2 = 10 k ). [V]. BAS3005A-02V. 30. 500. 10. 5. 370 200. 450 500. < 300 30 SC79. S22. C01. BAS3005B-02V. 30. 500. 6. 5. 410 200. 550 500. < 25. 30 SC79. S19. C01. Low VCEsat (BISS) transistors. 11. Low VCEsat transistors up to 2000 mW. 11. Low VCEsat (BISS) transistors single NPN. 11. Low VCEsat (BISS) transistors Jun 30, 2009 Standard End of Life. PDTC143ZT /A2. RET. 934063003215. N. M. 3. 31/Dec/09. 30/Jun/10. PDTC143ZT . Standard End of Life. PDTC144EE/A2. Dec 31, 2008 3. 30-Jun-08. 31-Dec-08. PDTC143ZE, PDTC143ZT , PDTC143ZU Standard End of Life. See Replacement. PDTC144ES. RET. 934047410126.