Part Number | PDTD114ETVL |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS NPN 0.425W |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 225MHz |
Power - Max | 320mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB (SOT23) |
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PDTD114ETVL
NxpSemiconductors
8000
0.71
MY Group (Asia) Limited
PDTD114ETVL
NXP Semiconductor
50000
1.8625
VIPOWER TECHNOLOGY LIMITED
PDTD114ETVL
WEEN/NXP
50000
3.015
Shenzhen Xinruizhi Technology Limited
PDTD114ETVL
NXP/Freescal
3260
4.1675
ONSTAR ELECTRONICS CO., LIMITED
PDTD114ETVL
NXP
20000
5.32
Ande Electronics Co., Limited