Part Number | PDTD123ET,215 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS NPN 250MW TO236AB |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB (SOT23) |
Image |
PDTD123ET215
NxpSemiconductors
452000
0.45
IC Chip Co., Ltd.
PDTD123ET215
NXP Semiconductor
40635
1.6075
Bonase Electronics (HK) Co., Limited
PDTD123ET,215
WEEN/NXP
8194
2.765
Viassion Technology Co., Limited
PDTD123ET,215
NXP/Freescal
75000
3.9225
Redstar Electronic Limited
PDTD123ET,215
NXP
8000
5.08
MY Group (Asia) Limited