Part Number | PEMB10,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS 2PNP PREBIAS 0.3W SOT666 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-666 |
Image |
PEMB10,115
NxpSemiconductors
4000
1.03
HK HEQING ELECTRONICS LIMITED
PEMB10-115
NXP Semiconductor
30000
2.15
Well Rich Trading Group Limited
PEMB10,115
WEEN/NXP
20000
3.27
Yingxinyuan INT'L (Group) Limited
PEMB10,115
NXP/Freescal
4000
4.39
SFW Electronic Co., Ltd
PEMB10,115
NXP
4000
5.51
Gallop Great Holdings (Hong Kong) Limited